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chk015a - qia ref. : dschk015a - qia5357 - 23 dec 15 1 / 18 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com 15w power packaged transistor ga n hemt on sic description the chk015a - qia is a n unmatched packaged gallium nitride high electron mobility transistor. it offers general purpose and broadband solutions for a variety of rf power applications. it is well suited for multi - purpose applications such as radar and telecommunication . the chk015a - qia is developed on a 0.5m gate length gan hemt process. it requires an external matching c ircuitry . it is proposed in low cost plastic package providing low parasitic and low thermal resistance. main features v ds = 50v, i d_q = 100ma, freq = 2.9ghz pulsed mode (1 0 0s, 10%) performances on s - band evaluation board 6 hours @ tj=200c main electrical characteristics tcase= +25c, pulsed mode , f = 3 ghz, v ds =50v, i d_q =100ma symbol parameter min typ max unit gain linear gain 1 8 2 0 db pout output power 15 20 w pae max power added efficiency 60 % g pae_max associated gain at max pae 1 6 db 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 10 15 20 25 30 35 40 45 50 55 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 drain current (a) gain (db), pout (dbm) & pae (%) input power (dbm) pae pout gain id
chk015a - qia 15w power packaged transistor ref. : dschk015a - qia5357 - 23 dec 15 2 / 18 specifications subject to change without notice bat. charmille - pa rc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com recommended dc operating ratings tcase= +25c symbol parameter min typ max unit conditions v ds drain to source voltage 50 v v gs_q gate to source voltage - 1.9 v v d =50v. i d_q =100ma i d_q quiescent drain current 0.1 0.35 a v d =50v i d_max drain current 0.65 (1) a v d =50v. compressed mode i g_max gate current (forward mode) 0 24 ma compressed mode t j_max junction temperature (1) 200 c (1) power dissipation must be considered dc characteristics tcase= +25c symbol parameter min typ max unit conditions v p pinch - off voltage - 3 - 2 - 1 v v d =50v. i d = i dss /100 i d_sat saturated drain current 2.7 (1) a v d =7v. v g =2v i g_leak gate leakage current (reverse mode) - 0. 8 ma v d =50v. v g = - 7v v bds drain - source break - down voltage 180 v v g = - 7v. i d =20ma r th thermal resistance (2) 6 c/w cw (1) for information, l imited by i d_max . see on absolute maximum ratings (2) cw mode, reference = package back - side rf characteristics tcase= +25c. pulsed mode symbol parameter min typ max unit conditions g ss small signal gain @ 3ghz small signal gain @ 6ghz 1 8 11 20 13 db db v d =50v. i d_q =100ma p sat saturated output power 15 20 w v d =50v. i d_q =100ma pae max pae @ 3ghz max pae @ 6ghz 60 50 % % v d =50v. i d_q =100ma g pae_max associated gain at max pae @ 3ghz @ 6ghz 16 9 db db v d =50v. i d_q =100ma these values are the intrinsic performance of the packaged device. they are deduced from measurements and simulations. they are considered in the reference plane defined by the leads of the package, at the connection interface with the pcb. the typical pe rformance achievable in more than 10% frequency band around 3ghz was demonstrated using the reference board 61502 522 presented hereafter.
15w power packaged transistor chk015a - qia ref. : dschk015a - qia5357 - 23 dec 15 3 / 18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com absolute maximum ratings tcase= +25c (1) (2) (3) symbol parameter rating unit note v ds drain - source biasing voltage 60 v v gs_q gate - source biasing voltage - 10. +2 v i g_max maximum gate current (forward mode) 48 ma i g_min minimum gate current (reverse mode) - 2 ma i d_max maximum drain current 2 a (4) p in maximum input power (5) t j junction temperature 220 c t stg storage temperature - 55 to +150 c t case case operating temperature see note c (4) (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s. (3) the given values must not be exceeded at the same time even momentarily for any parameter, since each parameter is independent from each other. otherwise deterioration or destruction of the device may take place. (4) max junction temperature must be considered (5) linked to and limited by i g_m ax & i g_min values. maximum input power depends on frequency. simulated source and load impedances v ds = 50v. i d_q = 100ma frequency (mhz) zs zl pout ( w) pae (%) 1000 2.96+ j13.07 39.21+ j33.14 21.16 66.69 2000 1.67+ j3.96 18.07+ j24.40 20.88 64.09 3000 1.79 - j0.80 11.08+ j17.47 20.68 61.61 4000 1.57 - j4.15 6.76+ j10.26 20.40 58.47 5000 1.68 - j7.33 4.70+ j5.82 19.92 56.04 6000 2.04 - j10.45 4.05+ j2.61 19.32 52.49 the impedances are chosen as a trade - off between output power. pae and stability of the device. these values are given in the reference plane defined by the connection between the transistor leads and the pcb according to the footprint above mentioned zl zs
chk015a - qia 15w power packaged transistor ref. : dschk015a - qia5357 - 23 dec 15 4 / 18 specifications subject to change without notice bat. charmille - pa rc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical simulated package sij parameters tamb. = +25c. v ds = 50v. i d_q = 100ma freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 0.25 0.930 - 86.7 0.018 38.8 30.010 129.0 0.610 - 44.6 0.50 0.890 - 125.0 0.022 16.0 18.860 104.5 0.490 - 65.2 0.75 0.880 - 142.9 0.023 3.1 13.170 90.3 0.460 - 77.7 1.00 0.880 - 153.1 0.023 - 6.0 9.930 80.0 0.470 - 87.5 1.25 0.880 - 159.8 0.023 - 13.2 7.860 71.6 0.500 - 95.9 1.50 0.880 - 164.8 0.022 - 19.4 6.420 64.3 0.530 - 103.2 1.75 0.890 - 168.7 0.021 - 24.8 5.380 57.7 0.560 - 109.9 2.00 0.890 - 171.9 0.020 - 29.6 4.580 51.7 0.600 - 115.8 2.25 0.890 - 174.7 0.019 - 33.9 3.960 46.1 0.630 - 121.3 2.50 0.900 - 177.2 0.019 - 37.9 3.460 40.9 0.660 - 126.3 2.75 0.900 - 179.6 0.018 - 41.5 3.050 36.0 0.680 - 130.9 3.00 0.900 178.3 0.017 - 44.7 2.710 31.5 0.710 - 135.2 3.25 0.900 176.2 0.016 - 47.7 2.430 27.1 0.730 - 139.2 3.50 0.910 174.2 0.015 - 50.4 2.190 23.0 0.750 - 142.9 3.75 0.910 172.3 0.014 - 52.8 1.990 19.0 0.770 - 146.4 4.00 0.910 170.5 0.013 - 54.9 1.810 15.3 0.780 - 149.7 4.25 0.910 168.6 0.012 - 56.7 1.660 11.7 0.800 - 152.8 4.50 0.910 166.8 0.011 - 58.3 1.530 8.2 0.810 - 155.8 4.75 0.910 165.1 0.010 - 59.6 1.420 4.8 0.820 - 158.7 5.00 0.910 163.3 0.009 - 60.5 1.320 1.6 0.830 - 161.4 5.25 0.910 161.6 0.009 - 61.0 1.230 - 1.6 0.840 - 164.0 5.50 0.910 159.8 0.008 - 61.0 1.150 - 4.7 0.850 - 166.5 5.75 0.910 158.0 0.007 - 60.5 1.090 - 7.7 0.850 - 168.9 6.00 0.910 156.3 0.007 - 59.2 1.020 - 10.6 0.860 - 171.3 6.25 0.910 154.5 0.006 - 57.0 0.970 - 13.5 0.860 - 173.6 6.50 0.910 152.7 0.005 - 53.6 0.920 - 16.4 0.870 - 175.9 6.75 0.910 150.9 0.005 - 48.6 0.880 - 19.2 0.870 - 178.1 7.00 0.910 149.1 0.004 - 41.6 0.840 - 22.0 0.880 179.8 7.25 0.910 147.2 0.004 - 32.5 0.800 - 24.8 0.880 177.6 7.50 0.910 145.4 0.004 - 21.7 0.770 - 27.5 0.880 175.5 7.75 0.910 143.4 0.004 - 10.4 0.740 - 30.2 0.890 173.4 8.00 0.910 141.5 0.004 0.2 0.720 - 33.0 0.890 171.4 8.25 0.910 139.5 0.005 8.8 0.690 - 35.7 0.890 169.3 8.50 0.900 137.5 0.005 15.4 0.670 - 38.4 0.890 167.2 8.75 0.900 135.4 0.006 20.0 0.650 - 41.1 0.890 165.2 9.00 0.900 133.3 0.007 23.2 0.630 - 43.9 0.890 163.1 9.25 0.900 131.1 0.008 25.2 0.620 - 46.6 0.900 161.0 9.50 0.900 128.8 0.009 26.3 0.600 - 49.4 0.900 158.9 9.75 0.890 126.5 0.010 26.7 0.590 - 52.2 0.900 156.8 10.00 0.890 124.2 0.011 26.6 0.580 - 55.0 0.900 154.6 10.25 0.890 121.7 0.012 26.1 0.570 - 57.8 0.900 152.5 10.50 0.880 119.2 0.014 25.2 0.560 - 60.7 0.900 150.3 11.00 0.880 113.9 0.016 22.6 0.540 - 66.6 0.900 145.8 these values are given in the reference plane defined by the connection between the transistor leads and the pcb according to the footprint previously mentioned
15w power packaged transistor chk015a - qia ref. : dschk015a - qia5357 - 23 dec 15 5 / 18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical simulated s - parameters tcase = +25c. cw mode. v ds =50v. i d_q =100ma. - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 0 1 2 3 4 5 6 7 8 9 10 11 s parameters (db) frequency (ghz) s11 s22 - 40 - 30 - 20 - 10 0 10 20 30 40 0 1 2 3 4 5 6 7 8 9 10 11 s parameters (db) frequency (ghz) s21 s12+20db
chk015a - qia 15w power packaged transistor ref. : dschk015a - qia5357 - 23 dec 15 6 / 18 specifications subject to change without notice bat. charmille - pa rc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com simulated maximum gain & stability characteristics tcase= +25c. cw mode. v ds =50v. i d_q =100ma 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 9 10 11 k factor msg/mag (db) frequency (ghz) msg/mag k
15w power packaged transistor chk015a - qia ref. : dschk015a - qia5357 - 23 dec 15 7 / 18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical performance on evaluation board (ref 61502 522 ) calibration and measurements are done on the connector access planes of the evaluation boards. tamb . = +25c. pulsed m ode (1) . v ds =50v. i d_q =100ma pout. pae. gain & id @ freq=2.9ghz pout. pae. gain & id @ pin=27dbm (1) input rf and gate voltage are pulsed. conditions are 100s width. 10% duty cycle and 1s offset between dc and rf pulse. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 10 15 20 25 30 35 40 45 50 55 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 drain current (a) gain (db), pout (dbm) & pae (%) input power (dbm) pae pout gain id 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 10 15 20 25 30 35 40 45 50 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 drain current (a) gain (db), pout (dbm) & pae (%) frequency (ghz) gain id pout pae
chk015a - qia 15w power packaged transistor ref. : dschk015a - qia5357 - 23 dec 15 8 / 18 specifications subject to change without notice bat. charmille - pa rc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical performance on evaluation board (ref 61502 522 ) calibration and measurements are done on the connector access planes of the evaluation boards. tamb . = +25c. pulsed m ode (1) . v ds =50v. i d_q =100ma pout. pae. gain & id @ pin=30dbm (1) input rf and gate voltage are pulsed. conditions are 100 s width. 10% duty cycle and 1s offset between dc and rf pulse. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 10 15 20 25 30 35 40 45 50 55 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 drain current (a) gain (db), pout (dbm) & pae (%) frequency (ghz) gain id pout pae
15w power packaged transistor chk015a - qia ref. : dschk015a - qia5357 - 23 dec 15 9 / 18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical performance on evaluation board (ref 61502 522 ) calibration and measurements are done on the connector access planes of the evaluation boards. tamb . = +25c. cw mode . v ds =50v. i d_q =100ma s parameters versus frequency - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 sij (db) frequency (ghz) s11 s21 s22
chk015a - qia 15w power packaged transistor ref. : dschk015a - qia5357 - 23 dec 15 10 / 18 specifications subject to change without notice bat. charmille - pa rc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical performance in temperature (on evaluation b oard) calibration and measurements are done on the connector access planes of the evaluation boards. tamb. = - 40c, +80c, pulsed m ode (1) , v ds =50v, i d_q =100ma pout, pae, gain & id @ 2.9 ghz & - 40c pout, pae, gain & id @ 2.9 ghz & +8 0 c (1) input rf and gate voltage are pulsed. conditions are 100 s width, 10% duty cycle and 1s offset between dc and rf pulse. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 10 15 20 25 30 35 40 45 50 55 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 drain current (a) gain (db), pout (dbm) & pae (%) input power (dbm) pae pout gain id - 40 c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 10 15 20 25 30 35 40 45 50 55 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 drain current (a) gain (db), pout (dbm) & pae (%) input power (dbm) pae pout gain id 80 c
15w power packaged transistor chk015a - qia ref. : dschk015a - qia5357 - 23 dec 15 11 / 18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical performance in temperature (on evaluation b oard) calibration and measurements are done on the connector access planes of the evaluation boards. tamb . = - 40c, +25c, +8 5 c, cw mode. v ds =5 0 v, i d_q =100ma (fixed @ +25c) linear gain versus temperature with id_q fixed @ each temperature (100ma) input return loss versus temperature with i d_q fixed @ each temperature (100ma) 0 5 10 15 20 25 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 linear gain (db) frequency (ghz) - 40 c 25 c 85 c - 15 - 10 - 5 0 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 input return loss (db) frequency (ghz) - 40 c 25 c 85 c
chk015a - qia 15w power packaged transistor ref. : dschk015a - qia5357 - 23 dec 15 12 / 18 specifications subject to change without notice bat. charmille - pa rc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com typical performance in temperature (on evaluation board) calibration and measurements are done on the connector access planes of the evaluation boards. tamb . = - 40c, +25c, +85c, cw mode. vds=50v, id_q=100ma (fixed @ +25c) output return loss versus temperature with i d_q fixed @ each temperature (100ma) - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 output return loss (db) frequency (ghz) - 40 c 25 c 85 c
15w power packaged transistor chk015a - qia ref. : dschk015a - qia5357 - 23 dec 15 13 / 18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com demonstration amplifier low frequency equivalent schematic (ref. 61502 522 ) demonstration amplifier bill of materials (ref. 61502 522 ) designator type value - description qty 24 capacitor 1pf. +/ - 0.1pf. 0603 1 16 capacitor 4.7pf. +/ - 0.25pf. 0603 1 17 capacitor 3.9pf. +/ - 0.25pf. 0603 1 18 capacitor 20pf. +/ - 5%. 0603 2 20 capacitor 100pf. +/ - 5%. 0603 1 21 capacitor 1nf. +/ - 5%. 0805 1 9 capacitor 1f. +/ - 10%. 1210 1 3 capacitor 68f. +/ - 20% 1 25 resistor 49.9?. +/ 3? +/ 100? +/ q1 j1 j2 j3 24 16 16 17 18 18 20 21 9 3 25 19 in out vg + vd + 30
chk015a - qia 15w power packaged transistor ref. : dschk015a - qia5357 - 23 dec 15 14 / 18 specifications subject to change without notice bat. charmille - pa rc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com demonstration amplifier circuit outline (ref. 61502 522 )
15w power packaged transistor chk015a - qia ref. : dschk015a - qia5357 - 23 dec 15 15 / 18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com demonstration amplifier circuit (ref. 6150 2522 )
chk015a - qia 15w power packaged transistor ref. : dschk015a - qia5357 - 23 dec 15 16 / 18 specifications subject to change without notice bat. charmille - pa rc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com package outline matte tin. lead free (green) 1 - nc 6 - nc 11 - d2 units : mm 2 - nc 7 - nc 12 - d1 from the standard : jedec mo - 220 3 - g1 8 - gnd 13 - nc 4 - g2 9 - nc 14 - gnd 15 - gnd 5 - g3 10 - d3 (a) tcase locates the reference point used to monitor the device temperature. this point has been taken at the device / system interface to ease system thermal design. tcase (a) (c)
15w power packaged transistor chk015a - qia ref. : dschk015a - qia5357 - 23 dec 15 17 / 18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com notes
chk015a - qia 15w power packaged transistor ref. : dschk015a - qia5357 - 23 dec 15 18 / 18 specifications subject to change without notice bat. charmille - pa rc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 - www.ums - gaas.com recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suit able reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information d fn 3 x4 package: chk015a - qia /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in thi s publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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